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Volumn 831, Issue , 2005, Pages 441-446

X-ray characterization of GaN single crystal layers grown by the anunonothermal technique on HYPE GaN seeds and by the sublimation technique on sapphire seeds

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; FIELD EFFECT TRANSISTORS; GROWTH KINETICS; HYDRIDES; LIGHT EMITTING DIODES; SAPPHIRE; SILICON CARBIDE; SINGLE CRYSTALS; SUBLIMATION; VAPOR PHASE EPITAXY; X RAY ANALYSIS;

EID: 23844535418     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.