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Volumn 831, Issue , 2005, Pages 441-446
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X-ray characterization of GaN single crystal layers grown by the anunonothermal technique on HYPE GaN seeds and by the sublimation technique on sapphire seeds
a a b b b c c c |
Author keywords
[No Author keywords available]
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Indexed keywords
CHARACTERIZATION;
FIELD EFFECT TRANSISTORS;
GROWTH KINETICS;
HYDRIDES;
LIGHT EMITTING DIODES;
SAPPHIRE;
SILICON CARBIDE;
SINGLE CRYSTALS;
SUBLIMATION;
VAPOR PHASE EPITAXY;
X RAY ANALYSIS;
AMMONOTHERMAL GROWTH;
DEFECT STRUCTURES;
GROWTH CONDITIONS;
SYNCHROTRON WHITE BEAM X-RAY TOPOGRAPHY (SWBXT);
GALLIUM NITRIDE;
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EID: 23844535418
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (12)
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