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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 A, 2004, Pages 1536-1540

Characterization of the Sn doped In2O3 film prepared by DC magnetron sputter type negative metal ion beam deposition

(3) Kim, Daeil a Ma, Dongjoon a,b Lee, Naesung b

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Sejong University (South Korea)

Author keywords

Electrical property; Indium tin oxide; Ion beam bombardment; Optical property; Sputtering; Surface roughness

Indexed keywords

DOPING (ADDITIVES); ELECTRIC PROPERTIES; INDIUM COMPOUNDS; ION BEAM ASSISTED DEPOSITION; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SPUTTERING; SURFACE ROUGHNESS; THIN FILMS;

INDIUM TIN OXIDES; ION BEAM BOMBARDMENT; ORGANIC LIGHT EMITTING DIODES (OLED);

TIN;

EID: 3042856511 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.1536 Document Type: Article

Times cited : (8)

References (17)

1
- 0033887315
- F. Akkad, M. Marafi and A. Punnoose: Phys. Status Solidi A 177 (2000) 445.
- (2000) Phys. Status Solidi A , vol.177 , pp. 445
- Akkad, F.¹ Marafi, M.² Punnoose, A.³

2
- 0035387572
- Y. Hashimoto, M. Hamagaki and T. Sakakibara: Jpn. J. Appl. Phys. 40 (2001) 4720.
- (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 4720
- Hashimoto, Y.¹ Hamagaki, M.² Sakakibara, T.³

3
- 0032482871
- M. Bender, W. Seelig, C. Daube, H. Frankenberger, B. Ocker and J. Stollenwerk: Thin Solid Films 326 (1998) 72.
- (1998) Thin Solid Films , vol.326 , pp. 72
- Bender, M.¹ Seelig, W.² Daube, C.³ Frankenberger, H.⁴ Ocker, B.⁵ Stollenwerk, J.⁶

4
- 0036497146
- C. Carvalho, A. Luis, G. Lavareda, E. Fortunato and A. Amaral: Surf. Coat. Technol. 151 (2002) 252.
- (2002) Surf. Coat. Technol. , vol.151 , pp. 252
- Carvalho, C.¹ Luis, A.² Lavareda, G.³ Fortunato, E.⁴ Amaral, A.⁵

5
- 0037094445
- D. Kim and S. Kim: Surf. Coat. Technol. 154 (2002) 204.
- (2002) Surf. Coat. Technol. , vol.154 , pp. 204
- Kim, D.¹ Kim, S.²

6
- 0037012543
- D. Kim and S. Kim: Thin Solid Films 408 (2002) 218.
- (2002) Thin Solid Films , vol.408 , pp. 218
- Kim, D.¹ Kim, S.²

7
- 0000754701
- F. Adurodija, H. Izumi, T. Ishihara, H. Yoshioka, H. Matsui and M. Motoyama: Vacuum 59 (2000) 641.
- (2000) Vacuum , vol.59 , pp. 641
- Adurodija, F.¹ Izumi, H.² Ishihara, T.³ Yoshioka, H.⁴ Matsui, H.⁵ Motoyama, M.⁶

8
- 0032318143
- S. Laux, N. Kaiser and A. Zoller: Thin Solid Films 335 (1998) 1.
- (1998) Thin Solid Films , vol.335 , pp. 1
- Laux, S.¹ Kaiser, N.² Zoller, A.³

9
- 0008946160
- K. Ogata and Y. Andoh: Nucl. Instrum. Methods Phys. Res. B 80 (1993) 1427.
- (1993) Nucl. Instrum. Methods Phys. Res. B , vol.80 , pp. 1427
- Ogata, K.¹ Andoh, Y.²

10
- 0012067947
- G. Tompa, W. Carr and M. Seidl: Appl. Phys. Lett. 48 (1986) 1048.
- (1986) Appl. Phys. Lett. , vol.48 , pp. 1048
- Tompa, G.¹ Carr, W.² Seidl, M.³

11
- 3042788609
- U.S. patent No. 6383345
- D. Kim and S. Kim: U.S. patent No. 6383345.
- Kim, D.¹ Kim, S.²

12
- 0032651171
- A. Kulkarni, K. Schulz, T. Lim and M. Khan: Thin Solid Films 345 (1999) 273.
- (1999) Thin Solid Films , vol.345 , pp. 273
- Kulkarni, A.¹ Schulz, K.² Lim, T.³ Khan, M.⁴

13
- 0031124044
- W. Wu and B. Chiou: Thin Solid Films 298 (1997) 221.
- (1997) Thin Solid Films , vol.298 , pp. 221
- Wu, W.¹ Chiou, B.²

14
- 0029346777
- L. Meng, A. Macarico and R. Martins: Vacuum 46 (1995) 673.
- (1995) Vacuum , vol.46 , pp. 673
- Meng, L.¹ Macarico, A.² Martins, R.³

15
- 0016992850
- G. Haacke: J. Appl. Phys. 47 (1976) 4086.
- (1976) J. Appl. Phys. , vol.47 , pp. 4086
- Haacke, G.¹

16
- 0035372219
- A. Kachouane, M. Addou, A. Bougrine, B. Elidrissi, R. Messoussi, M. Regragui and J. Bernede: Mat. Chem. Phys. 70 (2001) 285.
- (2001) Mat. Chem. Phys. , vol.70 , pp. 285
- Kachouane, A.¹ Addou, M.² Bougrine, A.³ Elidrissi, B.⁴ Messoussi, R.⁵ Regragui, M.⁶ Bernede, J.⁷

17
- 0242514327
- M. Stove and J. Tousek: Thin Solid Films 299 (1997) 957.
- (1997) Thin Solid Films , vol.299 , pp. 957
- Stove, M.¹ Tousek, J.²

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