Hydrogen ion diffusion coefficient of a hydrogenated amorphous silicon thin film

Journal of Materials Chemistry

Volumn 13, Issue 4, 2003, Pages 841-843

  Yu, George C ^a  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DIFFUSION; HYDROGENATION; ION SENSITIVE FIELD EFFECT TRANSISTORS; PH EFFECTS;

HYDROGEN TRAPS;

THIN FILMS;

ION; PROTON; SILICON;

ARTICLE; DIFFUSION COEFFICIENT; FILM; HYDRATION; HYDROGENATION; MEMBRANE; METHODOLOGY; PH MEASUREMENT; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 0037384822     PISSN: 09599428     EISSN: None     Source Type: Journal    
DOI: 10.1039/b301324n     Document Type: Article

References (13)

1. J. R. Collet Lacoste, Ph. D. Thesis, University Paris, Sud, Orsay, 1993.
2. T. Zakroczymski, Scr. Met., 1985, 19, 521.
3. T. Zakroczymski and Z. Smialowska, J. Electrochem. Soc., 1985, 132, 2548.
4. M. Nagano, Y. Hayashi, N. Othani, M. Isshiki and K. Igaki, Trans. JIM, 1981, 22, 423.
5. M. Nagano, Y. Hayashi, N. Othani, M. Isshiki and K. Igaki, Scr., Met., 1982, 16, 973.
6. S. I. Pyun and R. A. Oriani, Electrochim. Acta, 1991, 36, 825.
7. W. Luft and Y. S. Tsuo, Hydrogenated Amorphous Silicon Alloy Deposition Processes, Marcel Dekker, New York, 1st edn., 1993.
8. W. Esashi and T. Matsuo, IEEE Trans. Biomed. Eng., 1978, 25, 184.
9. H. Abe and T. Matsuo, IEEE Trans. Electron Devices, 1979, 26, 1939.
10. J. B. Shahtiar and R. L. Smith, IEEE Trans. Electron Devices,' 1998, 45(6), 1239.
11. J. Crank, The Mathematics of Diffusion, Oxford University Press, Oxford, 1975.
12. J. C. Chou, H. M. Tsai, C. N. Shiao and J. S. Lin, Sens. Actuators, B, 2000, 62, 97.
13. W. Beyer and U. Zastrow, J. Non-Cryst. Solids, 1998, 227, 880.