Junction leakage current degradation under the off-state bias-temperature stress: A new reliability assessment method for high-density DRAMs

IEEE Transactions on Device and Materials Reliability

Volumn 1, Issue 2, 2001, Pages 104-108

  Kim, Young Pil ^a   Kim, Sung Tae ^a   Moon, Joo Tae ^a   Kim, Sang U ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

DRAM; Leakage current; Off state bias stress; Reliability

Indexed keywords

EID: 3042610785     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/7298.956703     Document Type: Article

References (16)

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