Analysis of Band-to-Band Tunneling Leakage Current in Trench-Capacitor DRAM Cells

IEEE Electron Device Letters

Volumn 12, Issue 3, 1991, Pages 95-97

  Ozaki, T ^a   Nitayama, A ^a   Hamamoto, T ^a   Sunouchi, K ^a   Horiguchi, F ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DATA STORAGE, DIGITAL - RANDOM ACCESS; ELECTRIC FAULT CURRENTS - LEAKAGE CURRENTS; ELECTRONS - TUNNELING; SEMICONDUCTOR DEVICES, MOSFET - COMPUTER SIMULATION;

BAND BENDING; BAND-TO-BAND TUNNELING LEAKAGE; DRAIN LEAKAGE CURRENT; TRENCH-CAPACITOR DRAM CELLS;

DATA STORAGE, SEMICONDUCTOR;

EID: 0026123575     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.75723     Document Type: Article

References (6)

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2. L. Risch, R. Maly, W. Bergner, and R. Kircher, “Charge losses of n-doped trench cells,” in SSDM Dig. Tech. Papers, 1988, p. 585.
3. S. Banerjee, D. Coleman, Jr., W. Richardson, and A. Shah, “Leakage mechanisms in the trench transistor DRAM cell,” IEEE Trans. Electron Devices, vol. 35, no. 1, p. 108, 1988.
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5. K. Yamada et al., “A deep-trenched capacitor technology for 4 mega bit dynamic RAM,” in IEDM Tech. Dig., 1985, p. 702.
6. R. Shirota et al., “An accurate model of subbreakdown due to band to band tunneling and its application,” in IEDM Tech. Dig., 1988, p. 26.