IIA-8 Band-to-Band Tunneling and Thermal Generation Gate-Induced Drain Leakage

IEEE Transactions on Electron Devices

Volumn 35, Issue 12, 1988, Pages 2433-

  Voldman, Steven H ^a   Bracchitta, John A ^a   Fitzgerald, Daniel J ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES, MOSFET--TUNNELING;

ABSTRACT ONLY; BAND-TO-BAND TUNNELING; CMOS INTEGRATED CIRCUITS; GATE-INDUCED DRAIN LEAKAGE; THERMAL GENERATION;

DATA STORAGE, DIGITAL;

EID: 0024122020     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.8841     Document Type: Article

References (5)

1. S. Voldman, A. Byrant and W. Noble, “Vertical storage trench-gated diode leakage,” presented at the Device Res. Conf., June 1987.
2. W. Noble, A. Byant, and S. Voldman, “Parasitic leakage in DRAM trench storage capacitor vertical-gated didode,” in IEDM Tech. Dig., Dec. 1987.
3. S. Banerjee, J. Coleman, B. Richardson, and A. Shah, “A band-to-band band tunnelling effect in the trench transistor cell,” presented at the VLSI Symp., May 1987.
4. T. Y. Chan, J. Chen, P. K. Ko, and C. Hu, “The impact of gate-induced induced drain leakage current on MOSFET scaling,” in IEDM Tech. Dig., Dec. 1987.
5. C. Chang and J. Lien, “Corner-field induced drain leakage in thin oxide MOSFETs,” in IEDM Tech. Dig., Dec. 1987.