Reliability degradation of high density DRAM cell transistor junction leakage current induced by band-to-defect tunneling under the off-state bias-temperature stress

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2001, Pages 1-6

  Kim, Y P ^a   Park, Y W ^a   Moon, J T ^a   Kim, S U ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENT MEASUREMENT; ELECTRON TUNNELING; JUNCTION GATE FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; MOSFET DEVICES; RELIABILITY; THERMAL STRESS;

BAND TO DEFECT TUNNELING; CELL TRANSISTOR; JUNCTION LEAKAGE CURRENT;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0034979842     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. On the retention time distribution of dynamic random access memory
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6. Impact of gate-induced drain leakage current on the tail distribution of DRAM data retention time
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8. Band-to-band tunneling and thermal generation gate-induced drain leakage
9. The effect of gate field on the leakage characteristics of heavily doped junctions
10. Analysis of band-to-band tunneling leakage current in trench-capacitor DRAM cells
11. Extracting of the trap density at the gate periphery using the gated diode array for giga-bit DRAMs