Characterization of the time-dependent reliability fallout as a function of yield for a 130nm SRAM device and application to optimize production burn-in

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 165-170

  Forbes, Keith R ^a   Schani, Phil ^a  

^a MOTOROLA INC   (United States)

Author keywords

Acceleration factor; Burn in; CMOS reliability; Defect; High voltage screen; Reliability modeling; Yield

Indexed keywords

ACCELERATION FACTORS; BURN-IN; CMOS RELIABILITY; HIGH-VOLTAGE SCREENS;

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; FAILURE ANALYSIS; MATHEMATICAL MODELS; RELIABILITY THEORY; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

STATIC RANDOM ACCESS STORAGE;

EID: 3042563214     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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