Using time-dependent reliability fallout as a function of yield to optimize burn-in time for a 130 nm SRAM device

IEEE International Integrated Reliability Workshop Final Report

Volumn 2003-January, Issue , 2003, Pages 61-66

  Forbes, K R ^a   Arguello, N ^a  

^a MOTOROLA INC   (United States)

Author keywords

Acceleration; Costs; Failure analysis; Manufacturing; Maximum likelihood estimation; Probes; Production; Random access memory; Semiconductor device modeling; Voltage

Indexed keywords

COSTS; MAXIMUM LIKELIHOOD ESTIMATION; RELIABILITY ANALYSIS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; STATIC RANDOM ACCESS STORAGE;

BURN-IN; BURN-IN TIME; LIFE-TESTS; MANUFACTURING; MAXIMUM-LIKELIHOOD ESTIMATION; PRODUCT LIFETIME; RANDOM ACCESS MEMORY; STATISTIC MODELING; THERMAL ACCELERATIONS; TIME DEPENDENT RELIABILITY;

PARAMETER ESTIMATION;

EID: 3042603745     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2003.1283302     Document Type: Conference Paper

References (10)

1. J. G. Prendergast, "Reliability, Yield and Quality Correlation for a Particular Failure Mechanism", International Reliability Physics Symposium, 1993, pp. 87.
2. Way Kuo and Taeho Kim, "An Overview of Manufacturing Yield and Reliability Modeling for Semiconductor Products," IEEE, 1999, pp 1329.
3. C. Glen Shirley, "A Defect Model of Reliability", Tutorial 3 of the International Reliability Physics Symposium, 1996.
4. F. Kuper, J. van der Pol, E. Ooms, T. Johnson, R. Wijburg, W. Koster, D. Johnston, "Relation Between Yield and Reliability of Integrated Circuits: Experimental Results and Application to Continuous Early Failure Rate Reduction Programs", International Reliability Physics Symposium, 1996, pp. 17.
5. J. van der Pol, E. Ooms, T. van 't Hof, F. Kuper, "Impact of Latent Defects at Electrical Test on the Yield-Reliability Relation and Applications to Burn-in Elimination", IEEE, 1998, pp. 370.
6. H. H. Huston, C. P Clarke, "Reliability Defect Detection and Screening During Processing - Theory and Implementation", International Reliability Physics Symposium, 1992, pp. 268. 1992.
7. W. C. Riordan, R. Miller, J. M. Sherman, J. Hicks, "Microprocessor Reliability Performance as a Function of Die Location for a 0.25 micron, Five Layer Metal CMOS Logic Process", IEEE, 1999.
8. D. Kececioglu, Reliability Engineering Handbook, Prentice Hall, 1991.
9. R. Hogg, S. Klugman, Loss Distributions. New Jersey: John Wiley & Sons, 1991, ch. 13, pp. 559-565.
10. N. Arguello, L. Ginderman, "A Methodology to Determine the Burn-In Duration Using Interval Time-To-Failure Data," in preparation.