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Volumn , Issue , 2004, Pages 263-266

Test structures and analysis techniques for estimation of the impact of layout on MOSFET performance and variability

Author keywords

[No Author keywords available]

Indexed keywords

MECHANICAL STRESS; TRANSISTOR ARRAY TEST STRUCTURES;

EID: 3042520522     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (15)

References (10)
  • 1
    • 0037346053 scopus 로고    scopus 로고
    • Process and circuit design interlock for application-dependent scaling tradeoffs and optimization in the SoC era
    • C.H. Diaz et al., "Process and circuit design interlock for application-dependent scaling tradeoffs and optimization in the SoC era", IEEE J. of Solid-State Circuits, vol. 38, No. 3, pp. 444-449, 2003.
    • (2003) IEEE J. of Solid-State Circuits , vol.38 , Issue.3 , pp. 444-449
    • Diaz, C.H.1
  • 3
    • 0037966278 scopus 로고    scopus 로고
    • Study on STI mechanical stress induced variations on advanced CMOSFETs
    • Y.M. Sheu et al., "Study on STI mechanical stress induced variations on advanced CMOSFETs", Proc. of the IEEE Int. Conf. on Microelectronic Test Structures, 2003, vol. 16, pp. 205-208.
    • (2003) Proc. of the IEEE Int. Conf. on Microelectronic Test Structures , vol.16 , pp. 205-208
    • Sheu, Y.M.1
  • 4
    • 0036932273 scopus 로고    scopus 로고
    • Accurate modeling of trench isolation induced mechanical stress effects on MOSFET electrical performance
    • R.A. Bianchi et al., "Accurate Modeling of Trench Isolation Induced Mechanical Stress effects on MOSFET Electrical Performance", IEDM Tech. Dig., 2002, pp. 117-120.
    • (2002) IEDM Tech. Dig. , pp. 117-120
    • Bianchi, R.A.1
  • 5
    • 3042510837 scopus 로고    scopus 로고
    • Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
    • X. Xi et al, "BSIM4.3.0 MOSEFT model user's manual", Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, 2003.
    • (2003) BSIM4.3.0 MOSEFT Model User's Manual
    • Xi, X.1
  • 6
    • 0028548950 scopus 로고
    • Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs
    • T. Mizuno et al., "Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs", IEEE Transactions on Electron Devices, vol. ED-41, pp 2216-2221, 1994.
    • (1994) IEEE Transactions on Electron Devices , vol.ED-41 , pp. 2216-2221
    • Mizuno, T.1
  • 8
    • 0038303483 scopus 로고    scopus 로고
    • Characterization and modeling of MOSFET mismatch of a deep submicron technology
    • M. Quarantelli et al., "Characterization and modeling of MOSFET mismatch of a deep submicron technology", Proc. of the IEEE Int. Conf. on Microelectronic Test Structures, 2003, vol. 16, pp. 238-243.
    • (2003) Proc. of the IEEE Int. Conf. on Microelectronic Test Structures , vol.16 , pp. 238-243
    • Quarantelli, M.1
  • 9
    • 0022693437 scopus 로고
    • First-order parameter extraction on enhancement silicon MOS transistors
    • April
    • M.F. Hamer, "First-order parameter extraction on enhancement silicon MOS transistors", IEE Proceedings, Vol. 133, Pt. 1, No. 2, pp. 49-54, April 1986.
    • (1986) IEE Proceedings , vol.133 , Issue.2 PART 1 , pp. 49-54
    • Hamer, M.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.