Design of negative charge pump circuit with polysilicon diodes in a 0.25 μm CMOS process

2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings

Volumn , Issue , 2002, Pages 145-148

  Ker, Ming Dou ^a   Chang, Chyh Yih ^b   Jiang, Hsin Chin ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

charge pump circuit; Polysilicon diode

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIODES; ELECTRIC GROUNDING; INTEGRATED CIRCUIT DESIGN; POLYCRYSTALLINE MATERIALS; POLYSILICON; RECONFIGURABLE HARDWARE;

CMOS PROCESSS; DEVICE CHARACTERISTICS; NEGATIVE CHARGE; NEGATIVE VOLTAGE; P-TYPE SUBSTRATES; POLYSILICON DIODES; PROCESS MODIFICATIONS; VOLTAGE WAVEFORMS;

CHARGE PUMP CIRCUITS;

EID: 3042514393     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APASIC.2002.1031553     Document Type: Conference Paper

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