29-mm2, 1.8-V-only, 16-Mb DINOR flash memory with gate-protected-poly-diode (GPPD) charge pump

IEEE Journal of Solid-State Circuits

Volumn 34, Issue 11, 1999, Pages 1551-1556

  Miyawaki, Yoshikazu ^a   Ishizaki, Osamu ^a   Okihara, Yoshihiko ^a   Inaba, Tsutomu ^a   Nitta, Fumihiko ^a   Mihara, Masaaki ^a   Hayasaka, Takashi ^a   Kobayashi, Kazuo ^a   Omae, Tadashi ^a   Kimura, Hiroshi ^a   Shimizu, Satoshi ^a   Makimoto, Hiromi ^a   Kawajiri, Yoshiki ^b   Wada, Masashi ^b   Sonoyama, Hirofumi ^b   Etoh, Jun ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LOGIC CIRCUITS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES;

FLASH MEMORY; GATE-PROTECTED-POLY-DIODE (GPPD) CHARGE PUMPS;

DATA STORAGE EQUIPMENT;

EID: 0033221852     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.799862     Document Type: Article

References (5)

1. T. Jinbo et al., "A 5-V-only 16-Mb flash memory with sector erase mode," IEEE J. Solid-State Circuits, vol. 27, pp. 1547-1553, Nov. 1992.
2. A. Umezawa et al., "A 5-V-only operation 0.6-μm flash EEPROM with row decoder scheme in triple-well structure," IEEE J. Solid-State Circuits, vol. 27, pp. 1540-1546, Nov. 1992.
3. S. Kobayashi et al., "A 3.3 V-only 16 Mb DINOR flash memory," in ISSCC'95 Dig. Tech. Papers, Feb. 1995, pp. 122-123.
4. M. Dutoit et al., "Lateral poly silicon p-n diodes," J. Electrochem. Soc., vol. 125, pp. 1648-1651, 1978.
5. M. Mihara et al., "Negative heap pump for low voltage operation flash memory," in Symp. VLSI Circuits, 1996, pp. 76-77.