A fast pump-down VBB generator for sub-1.5-V DRAMs

IEEE Journal of Solid-State Circuits

Volumn 36, Issue 7, 2001, Pages 1154-1157

  Min, K S ^a   Chung, J Y ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Charge pump; Low voltage memory circuit; Pumping efficiency; VBB generator

Indexed keywords

COUPLED CIRCUITS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC RESISTANCE MEASUREMENT; SIGNAL GENERATORS; VOLTAGE CONTROL; VOLTAGE MEASUREMENT;

CHARGE PUMP; CROSS COUPLED HYBRID PUMPING CIRCUIT; LOW VOLTAGE MEMORY CIRCUIT; PUMP DOWN GENERATOR; PUMPING EFFICIENCY;

ELECTRIC POWER SUPPLIES TO APPARATUS;

EID: 0035391754     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.933476     Document Type: Article

References (6)

1. A 1.5 V circuit technology for 64 Mb DRAMs
2. An efficient back-bias generator with hybrid pumping circuit for 1.5 V DRAM's
3. A high-efficiency back-bias generator with cross-coupled hybrid pumping circuit for sub- 1.5 V DRAM applications
4. A 10-bit, 20 MS/s, 35 mW pipeline A/D converter
5. A 1-V operating 256-kb full-CMOS SRAM
6. A high-efficiency CMOS voltage doubler