SCOPUS 정보 검색 플랫폼

Volumn 159, Issue 1-4, 1996, Pages 307-311

Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPE

(11) Heitz, R a Moll, E a Kutzer, V a Wiesmann, D a Lummer, B a Hoffmann, A a Broser, I a Baume P b Taudt, W c Sollner J c Heuken, M c

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b UNIVERSITY OF BREMEN (Germany)

c RWTH AACHEN UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CHARGE CARRIERS; CRYSTAL IMPURITIES; EPITAXIAL GROWTH; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PHOTOLUMINESCENCE; PLASMAS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING;

COMPENSATION; DONOR ACCEPTOR PAIR; FLUCTUATIONS; OPTICAL NEUTRALIZATION; PHOTOLUMINESCENCE EXCITATION;

SEMICONDUCTOR GROWTH;

EID: 0030562145 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00817-9 Document Type: Article

Times cited : (23)

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