P-type GaN directly grown by low pressure metalorganic vapor phase epitaxy

Chinese Physics Letters

Volumn 14, Issue 8, 1997, Pages 637-640

  Zhang, Guo Yi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS;

AMBIENTS; AS-GROWN; DOPED SEMICONDUCTORS; ELECTRONS CONCENTRATION; LOW PRESSURE METAL ORGANIC VAPOR-PHASE EPITAXIES; LOW-PRESSURE METALORGANIC VAPOR PHASE EPITAXY; P-TYPE CONDUCTION; P-TYPE GAN; POST TREATMENT; THERMAL-ANNEALING;

HOLE CONCENTRATION;

EID: 0031317564     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/14/8/020     Document Type: Article

References (4)

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