Two-dimensional InGaAs quantum-dot arrays with periods of 70-100 nm on artificially prepared nanoholes

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 3 A, 2004, Pages

  Nakamura, Yusui ^a   Ikeda, Naoki ^a   Ohkouchi, Shunsuke ^a   Sugimoto, Yoshimasa ^a   Nakamura, Hitoshi ^a   Asakawa, Kiyoshi ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

InGaAs; Nanohole; Quantum dots; Quantum dot array; Scanning tunneling microscopy; Vertical alignment

Indexed keywords

ANNEALING; ARRAYS; DEPOSITION; ELECTRON BEAMS; LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; NUCLEATION; PHOTOLUMINESCENCE; PROBABILITY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SURFACE PROPERTIES;

LOW-TEMPERATURE DEPOSITION; NANOHOLES; QUANTUM-DOT ARRAYS; VERTICAL ALIGNMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2442464970     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l362     Document Type: Article

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