(In, Ga)As islands formed on shallow patterned GaAs (1 0 0) substrates by molecular beam epitaxy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 1176-1180

  Gong, Q ^a   Notzel R ^a   Schonherr H P ^b   Ploog, K H ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Atomic force microscopy; GaAs; Molecular beam epitaxy; Patterned Substrate

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR ORIENTATION; MORPHOLOGY; SEMICONDUCTOR GROWTH; SUBSTRATES;

PATTERNED SUBSTRATES;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0036492842     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00330-2     Document Type: Article

References (12)