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Volumn 30, Issue 23, 2005, Pages 3120-3122

Response of a SiC photodiode to extreme ultraviolet through visible radiation

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COLLECTION EFFICIENCY (CCE); EXTREME ULTRAVIOLET (EUV) REGION; VISIBLE-LIGHT SENSITIVITY; X-RAY ABSORPTION;

EID: 29444449283     PISSN: 01469592     EISSN: None     Source Type: Journal    
DOI: 10.1364/OL.30.003120     Document Type: Article
Times cited : (39)

References (14)
  • 7
    • 84893991508 scopus 로고    scopus 로고
    • Boston Electronics Corp., Brookline, Mass., JEC4 SiC photodiode
    • Boston Electronics Corp., Brookline, Mass., JEC4 SiC photodiode.
  • 10
    • 84870428832 scopus 로고    scopus 로고
    • Lawrence Berkeley National Laboratory, Berkeley CA
    • Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley CA, www.cxro.lbl.gov.
    • Center for X-ray Optics


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.