High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p-i-n photodiodes

Applied Physics Letters

Volumn 84, Issue 21, 2004, Pages 4185-4187

  Butun, B ^a   Biyikli, N ^a   Kimukin, I ^a   Aytur, O ^a   Ozbay, E ^a   Postigo, P A ^b   Silveira, J P ^b   Alija, A R ^b  

^a BILKENT UNIVERSITY   (Turkey)

^b INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAVITY RESONATORS; LIGHT ABSORPTION; MIRRORS; MOLECULAR BEAM EPITAXY; OPTICAL FIBERS; PHOTOCURRENTS; PHOTODETECTORS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

DETECTOR CAVITIES; OPTICAL DESIGNS; PULSE-RESPONSE MEASUREMENTS; RESONANT-CAVITY-DETECTOR STRUCTURES;

PHOTODIODES;

EID: 2942692115     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1756208     Document Type: Article

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