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Volumn 155, Issue 1-3, 1998, Pages 206-212

Refractive index and absorption changes in low-temperature-grown GaAs

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS;

EID: 0032183578     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0030-4018(98)00341-1     Document Type: Article
Times cited : (12)

References (12)
  • 2
    • 0032142140 scopus 로고    scopus 로고
    • Optical characterization of low-temperature-grown GaAs for ultrafast all-optical switching devices
    • H.S. Loka, S.D. Benjamin, P.W.E. Smith, Optical characterization of low-temperature-grown GaAs for ultrafast all-optical switching devices, IEEE J. Quantum Electron. 34 (1998) 1426.
    • (1998) IEEE J. Quantum Electron. , vol.34 , pp. 1426
    • Loka, H.S.1    Benjamin, S.D.2    Smith, P.W.E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.