High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation

Applied Physics Letters

Volumn 72, Issue 21, 1998, Pages 2727-2729

  Unlu M S ^a   Gokkavas M ^a   Onat, B M ^a   Ata, E ^b   Ozbay E ^b   Mirin, R P ^c   Knopp, K J ^c   Bertness, K A ^c   Christensen, D H ^c  

^a Boston University   (United States)

^b BILKENT UNIVERSITY   (Turkey)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001571420     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121073     Document Type: Article

References (10)

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