SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 737, Issue , 2003, Pages 13-17

Occurrence of 'accidental' InN quantum dots in indium gallium nitride/gallium nitride heterostructures

(8) O'Donnell, K P a Martin, R W a White, M E a Pereira, S a Mosselmans, J F W b Tobin, M J b Grandjean, N c Damilano, B c

a UNIVERSITY OF STRATHCLYDE (United Kingdom)

b DARESBURY LABORATORY (United Kingdom)

c CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRIC FIELD EFFECTS; EMISSION SPECTROSCOPY; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; X RAY SPECTROSCOPY;

INDIUM GALLIUM NITRIDE; MOLECULAR BEAM EPITAXIAL QUANTUM BOXES; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; QUANTUM CONFINEMENT; X RAY ABSORPTION FINE STRUCTURE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0038826192 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (1)

References (12)

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