Structure characterization of Fe films grown on GaAs (1 0 0) by ion-beam sputter epitaxy

Journal of Crystal Growth

Volumn 267, Issue 1-2, 2004, Pages 231-238

  Monteverde, F ^a,b   Michel, A ^a   Eymery, J P ^a   Guerin Ph ^a  

^a Lab de Métallugie Physique   (France)

^b MATERIA NOVA RESEARCH CENTER   (Belgium)

Author keywords

A1. Crystal structure; A1. Interfaces; A1. X ray diffraction; A3. Physical vapor deposition; B2. Magnetic materials; B2. Semiconducting gallium arsenide

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION BEAMS; IRON; MAGNETIC MATERIALS; METALLIC FILMS; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ION-BEAM SPUTTER EPITAXY; ROCKING CURVES; SOLID-STATE REACTIONS;

FILM GROWTH;

EID: 2942676890     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.03.075     Document Type: Article

References (29)

1. Prinz G.A., Krebs J.J. Appl. Phys. Lett. 39:1981;397.
2. Quadri S.B., Goldenberg M., Prinz G.A., Ferrari J.M. J. Vac. Sci. Technol. B. 3:1985;718.
3. Krebs J.J., Jonker B.T., Prinz G.A. J. Appl. Phys. 61:1987;2596.
4. Datta S., Das B. Appl. Phys. Lett. 56:1990;665.
5. Chambers S.A., Xu F., Chen H.W., Vitomirov I.M., Anderson S.B., Weaver J.H. Phys. Rev. B. 34:1986;6605.
6. Xu Y.B., Kernohan E.T.M., Freeland D.J., Ercole A., Tselepi M., Bland J.A.C. Phys. Rev. B. 58:1998;890.
7. Filipe A., Schuhl A. J. Appl. Phys. 81:1997;4359.
8. Filipe A., Schuhl A., Galtier P. Appl. Phys. Lett. 70:1997;129.
9. Lépine B., Ababou S., Guivarc'h A., Jézéquel G., Députier S., Guérin R., Filipe A., Schuhl A., Abel F., Cohen C., Rocher A., Crestou J. J. Appl. Phys. 83:1998;3077.
10. Tustison R.W., Varitimos T., Van Hook J., Schloemann E.F. Appl. Phys. Lett. 51:1987;285.
11. Endo Y., Okamoto S., Titakami O., Shimada Y. J. Appl. Phys. 81:1997;344.
12. Kim T.W., Yoon Y.S. J. Phys. Chem. Sol. 61:2000;847.
13. Bernstein S.D., Wong T.Y., Tustison R.W. J. Appl. Phys. 72:1992;4358.
14. Harp G.R., Parkin S.S.P. Thin Solid Films. 288:1996;315.
15. Kreuzer S., Prügl K., Bayreuther G., Weiss D. Thin Solid Films. 318:1998;219.
16. Li B., Fermin J.R., Azevedo A., de Aguiar F.M., Rezende S.M. Appl. Phys. Lett. 72:1998;2760.
17. Bernstein S.D., Wong T.Y., Tustison R.W. J. Vac. Sci. Technol. A. 17:1999;571.
18. Monteverde F., Michel A., Guérin P., Eymery J.P. Surf. Sci. 482-485:2001;872.
19. Députier S., Guérin R., Lépine B., Guivarc'h A., Jézéquel G. J. All. Comp. 262:1997;416.
20. Monteverde F., Michel A., Kherici A., Eymery J.P. Thin Solid Films. 379:2000;114.
21. Monteverde F., Michel A., Eymery J.P., Désoyer J.C. Appl. Surf. Sci. 172:2001;265.
22. Maeder G. Chem. Scr. 26A:1986;23.
23. C. Lallaizon, Thesis, University of Rennes, France, 2000.
24. Matthews J.W., Blakeslee A.E. J. Crystal Growth. 27:1974;118.
25. Harris I.R., Smith N.A., Devlin E., Cockayne B., Macewan W.R., Longworth G. J. Less-Common Metals. 146:1989;103.
26. Greaves C., Devlin E.J., Smith N.A., Harris I.R., Cockayne B., Macewan W.R. J. Less-Common Metals. 157:1990;315.
27. Rahmoune M., Eymery J.P., Denanot M.F. J. Magn. Magn. Mater. 175:1997;219.
28. Monteverde F., Michel A., Fnidiki A., Eymery J.P. Eur. Phys. J. AP. 21:2003;179.
29. F. Monteverde, A. Michel, J.P. Eymery, A. Fnidiki, J. All. Comp. in press.