An x-ray diffraction and Mössbauer study of interdiffusion phenomena at the interface between Fe and In0.5Ga0.5As (001)

EPJ Applied Physics

Volumn 21, Issue 3, 2003, Pages 179-185

  Monteverde, F ^a   Michel, A ^a   Fnidiki, A ^b   Eymery, J P ^a  

^a UNIVERSITÉ DE POITIERS   (France)

^b Université de Rouen   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ETCHING; INTERDIFFUSION (SOLIDS); ION BEAMS; IONS; IRON; MOSSBAUER SPECTROSCOPY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPUTTER DEPOSITION; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ION BEAM SPUTTERING DEPOSITION; MONOCRYSTALLINE; POLYCRYSTALLINE IRON THIN FILMS; SOLID-SOLID INTERFACES;

INTERFACES (MATERIALS);

EID: 0037338108     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2003002     Document Type: Article

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