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Applied Surface Science

Volumn 172, Issue 3-4, 2001, Pages 265-275

On the growth of Fe2As grains at the interface of the Fe/AlxGa1-xAs (x = 0.25) system

(4) Monteverde, F a Michel, A a Eymery, J P a Desoyer, J C a

a UNIVERSITÉ DE POITIERS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; ETCHING; GRAIN GROWTH; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); IRON; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SPUTTER DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; VACUUM;

ION BEAM SPUTTERING DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0034824776 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(00)00865-5 Document Type: Article

Times cited : (9)

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