Transmission electron microscope analysis of epitaxial growth processes in the sputtered β-FeSi2/Si(001) films

Thin Solid Films

Volumn 461, Issue 1, 2004, Pages 120-125

  Itakura, Masaru ^a   Norizumi, Daigo ^a   Ohta, Tomohisa ^a   Tomokiyo, Yoshitsugu ^a   Kuwano, Noriyuki ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

FeSi2; Epitaxial relationship; High resolution TEM; Selected area electron diffraction pattern; Sputtering; Transmission electron microscopy

Indexed keywords

CRYSTALLOGRAPHY; ELECTRON DIFFRACTION; FILMS; IRON COMPOUNDS; SILICON COMPOUNDS; SPUTTERING; SUBSTRATES; TEMPERATURE CONTROL; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL RELATIONSHIP; HIGH-RESOLUTION TEM; SELECTED AREA ELECTRON DIFFRACTION PATTERN; SILICON SUBSTRATES;

EPITAXIAL GROWTH;

EID: 2942666073     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.02.084     Document Type: Conference Paper

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