Transmission electron diffraction analysis of crystallographic orientation of β-FeSi2 produced by sputtering on Si(001) substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 1, 2003, Pages 86-87

  Kuwano, Noriyuki ^a   Norizumi, Daigo ^a   Fukuyama, Tomohiro ^a   Itakura, Masaru ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Crystallographic orientation; Electron diffraction pattern; Silicon substrate sputtering; Transmission electron microscopy; FeSi2

Indexed keywords

CALCULATIONS; CRYSTAL LATTICES; CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SPUTTERING; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

CRYSTALLOGRAPHIC ORIENTATION; IRON DISILICIDE; TRANSMISSION ELECTRON DIFFRACTION;

IRON COMPOUNDS;

EID: 0038682079     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.86     Document Type: Article

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