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Microelectronics Reliability

Volumn 37, Issue 1, 1997, Pages 61-75

Comparison of self-heating effect in GAA and SOI MOSFETs

(3) Francis, P a Colinge, J P a Flandre, D a

a UNIVERSITÉ CATHOLIQUE DE LOUVAIN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; GATES (TRANSISTOR); OXIDES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL EFFECTS;

BACK POLYSILICON GATES; BURIED OXIDES; GATE ALL AROUND (GAA) DEVICES; SELF HEATING EFFECTS;

MOSFET DEVICES;

EID: 0030787284 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/0026-2714(96)00239-9 Document Type: Article

Times cited : (5)

References (8)

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2
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3
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4
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5
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6
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7
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8
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.