Dependence of subthreshold hump and reverse narrow channel effect on the gate length by suppression of transient enhanced diffusion at trench isolation edge

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2136-2140

  Jung, Jong Wan ^a   Kim, Jong Min ^a   Son, Jeong Hwan ^a   Lee, Youngjong ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Interstitial; Reverse narrow channel effect (RNCE); Reverse short channel effect (RSCE); Shallow trench isolation (STI); Subthreshold hump; Transient enhanced diffusion (TED)

Indexed keywords

ATOMS; BORON; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; DYNAMIC RANDOM ACCESS STORAGE; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); ION IMPLANTATION; MOSFET DEVICES; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

INTERSTITIAL; REVERSE NARROW CHANNEL EFFECT; REVERSE SHORT CHANNEL EFFECT; SUBTHRESHOLD HUMP; TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0033691850     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2136     Document Type: Article

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