Investigation of transient effects in SOI MOSFETs at high temperature

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 436-439

  Augendre, E ^a   Pelloie, J L ^a   Cristoloveanu, S ^b   Borel, G ^c  

^a CEA LETI   (France)

^b Grenoble INP Phelma   (France)

^c Thomson TCS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; DRAIN CURRENT; SOLS;

DRAIN CURRENT TRANSIENT; ENHANCEMENT-MODE; HIGH TEMPERATURE; PARTIALLY DEPLETED; SOI-MOSFETS; STRONG INVERSION; TEMPERATURE DEPENDENCE; TRANSIENT EFFECT;

MOSFET DEVICES;

EID: 84908157050     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S. Cristoloveanu and S. S. Li, Electrical Characterization of SOl Materials and Devices, Kluwer Academic, 1995, pp. 318-327.
2. D. Weiser, D. Munteanu, S. Cristoloveanu, O. Faynot, l-L. Pelloie and J. Fossum, "GenerationlRecombination Transient Effects in sal Transistors: Systematic Experiments and Simulations", to be published in IEEE Trans. Elec. Dev., special issue, 1998.
3. D. B. M. Klaassen, "A Unified Mobility Model for Device Simulation-II. Temperature Dependence of Carrier Mobility and Lifetime", Solid State Electronics, Vol. 35, No 7, 1992, pp. 961-967.
4. D. K. Schroder, "Carrier Lifetimes in Silicon ", IEEE Trans. Elec. Dev., Vol. 44, W I, 1997, pp. 160-170.