New compact model for generation drain current transients in weak and moderate inversions of submicron floating-body PD SOI MOSFETs

2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Volumn , Issue , 2002, Pages 754-757

  Ionescu, A M ^a   Munteanu, D ^b  

^a EPFL   (Switzerland)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Carrier lifetime; Compact modeling; Silicon On Insulator; Submicron MOSFET; Weak inversion

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; OPTIMIZATION; SIGNAL PROCESSING; SILICON ON INSULATOR TECHNOLOGY; THICKNESS MEASUREMENT; TRANSISTOR TRANSISTOR LOGIC CIRCUITS; VLSI CIRCUITS;

CARRIER LIFETIME; COMPACT MODELING; SUBMICRON MOSFET; WEAK INVERSION;

MOSFET DEVICES;

EID: 6344239335     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. H. Shin et al., "A simple technique to measure generation lifetime in PD SOI MOSFETs", IEEE Trans. El. Dev., vol. 45, pp. 2378-2380, 1998.
2. D. Munteanu et al., "Generation-Recombination Transient Effects in PD SOI Transistors: Systematic Experiments and Simulations", IEEE Trans. El. Dev., vol. 45, p. 1678-1683, 1998.
3. A.M. Ionescu et al., "A unified model of threshold voltage, subthreshold slope and interface coupling in thin film SOI MOSFETs", Proc. of 1993 IEEE Int. SOI Conference, p. 144-145.
4. D. Munteanu, A.M. Ionescu, to be published, 2002.
5. Atlas user manual, 2000.
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8. D.E. Ioannou et al., "Characterization of Carrier Generation in Enhancement-Mode SOI MOSFETs", IEEE El. Dev. Letts., vol. 11, p. 409-411, 1990.