A simple technique to measure generation lifetime in partially depleted SOI MOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 11, 1998, Pages 2378-2380

  Shin, Hyungcheol ^a   Racanelli, M ^b   Huang, W M ^b   Foerstner, J ^b   Choi, Seokjin ^a   Schroder, D K ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b MOTOROLA INC   (United States)

^c Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

GENERATION LIFETIME; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

MOSFET DEVICES;

EID: 0032202487     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.726663     Document Type: Article

References (14)

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