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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 4 A, 2004, Pages

p-Type doping characteristics of GaInNAs:Be grown by solid source molecular beam epitaxy

(6) Matsuura, Tetsuya a Miyamoto, Tomoyuki a Makino, Shigeki a,b Ohta, Masataka a Matsui, Yasutaka a Koyama, Fumio a

Author keywords

Beryllium doping; GaInNAs; GaNAs; Ohmic contact; p type doping; Solid source molecular beam epitaxy; Specific contact resistance

Indexed keywords

BERYLLIUM; BRAGG CELLS; CRYSTAL LATTICES; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ENERGY GAP; HOLE MOBILITY; LASERS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS;

BERYLLIUM DOPING; GAINNAS; GANAS; P-TYPE DOPING; SOLID SOURCE MOLECULAR BEAM EPITAXY; SPECIFIC CONTACT RESISTANCE;

GALLIUM ALLOYS;

EID: 2942622596 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.43.l433 Document Type: Article

Times cited : (22)

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