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Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 115-118

Disorder-induced nucleation in the nanocrystalline silicon film growth from chlorinated materials by rf plasma-enhanced chemical vapor deposition

(3) Shirai, Hajime a Ito, Tetsuji a Ikeda, Yoshie a

a SAITAMA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PHASE TRANSITIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SILICON; THERMAL EFFECTS;

DEPOSITION CHAMBERS; DEPOSITION PRESSURE; ELECTRON TEMPERATURE; FILM DEPOSITION;

NANOSTRUCTURED MATERIALS;

EID: 2942620499 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2004.02.033 Document Type: Conference Paper

Times cited : (7)

References (15)

1
- 0002139241
- Matsuda A. Thin Solid Films. 337:1999;1.
- (1999) Thin Solid Films , vol.337 , pp. 1
- Matsuda, A.¹

2
- 0028529704
- Shirai H., Drevillon B., Shimizu I. Jpn. J. Appl. Phys. 33:1994;5590.
- (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 5590
- Shirai, H.¹ Drevillon, B.² Shimizu, I.³

3
- 2442579005
- Koh J., Lee Y., Fujiwara H., Wronski C.R., Collins R.W. Appl. Phys. Lett. 73:1989;151.
- (1989) Appl. Phys. Lett. , vol.73 , pp. 151
- Koh, J.¹ Lee, Y.² Fujiwara, H.³ Wronski, C.R.⁴ Collins, R.W.⁵

4
- 0003945437
- G. Bruno, P. Capezzuto, & A. Madan. Boston, MA: Academic. Chapter 1
- Bruno G., Capezzuto P., Cicala G. Bruno G., Capezzuto P., Madan A. Plasma Deposition of Amorphous Silicon-based Materials. 1995;Academic, Boston, MA. Chapter 1.
- (1995) Plasma Deposition of Amorphous Silicon-based Materials
- Bruno, G.¹ Capezzuto, P.² Cicala, G.³

5
- 0030563366
- Ikeda T., Osborne I.S., Hata N., Matsuda A. J. Non-Cryst. Solids. 198-200:1996;987.
- (1996) J. Non-cryst. Solids , vol.198 , Issue.200 , pp. 987
- Ikeda, T.¹ Osborne, I.S.² Hata, N.³ Matsuda, A.⁴

6
- 0032634821
- Fukai C., Moriya Y., Nakamura T., Shirai H. Jpn. J. Appl. Phys. 38:1999;L554.
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 554
- Fukai, C.¹ Moriya, Y.² Nakamura, T.³ Shirai, H.⁴

7
- 0035270245
- Liu H., Jung S.H., Fujimura Y., Toyoshima Y., Shirai H. Jpn. J. Appl. Phys. 40:2001;L215.
- (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 215
- Liu, H.¹ Jung, S.H.² Fujimura, Y.³ Toyoshima, Y.⁴ Shirai, H.⁵

8
- 0348156936
- Kurosaki K., Hashimoto K., Nakao A., Shirai H. Jpn. J. Appl. Phys. 42:2003;6296.
- (2003) Jpn. J. Appl. Phys. , vol.42 , pp. 6296
- Kurosaki, K.¹ Hashimoto, K.² Nakao, A.³ Shirai, H.⁴

9
- 0036778601
- Jung S.H., Fujimura Y., Shirai H. Solar Energy Mater. Solar Cells. 74:2002;421.
- (2002) Solar Energy Mater. Solar Cells , vol.74 , pp. 421
- Jung, S.H.¹ Fujimura, Y.² Shirai, H.³

10
- 0001694723
- Guo G., Toyoshima Y., Kondo M., Matsuda A. Appl. Phys. Lett. 75:1999;1116.
- (1999) Appl. Phys. Lett. , vol.75 , pp. 1116
- Guo, G.¹ Toyoshima, Y.² Kondo, M.³ Matsuda, A.⁴

11
- 0003957808
- Academic Press, Orlando, FL, Chapter 6
- J.S. Lannin, Semiconductors and Semimetals, vol. 21B, Academic Press, Orlando, FL, Chapter 6.
- Semiconductors and Semimetals , vol.21 B
- Lannin, J.S.¹

12
- 0029210359
- Dillon A.C., Wise M.L., Robinson M.B., Geroge S.M. J. Vac. Sci. Technol. A. 13:1995;1.
- (1995) J. Vac. Sci. Technol. A , vol.13 , pp. 1
- Dillon, A.C.¹ Wise, M.L.² Robinson, M.B.³ Geroge, S.M.⁴

13
- 0037841887
- Hashimoto K., Shirai H. Jpn. J. Appl. Phys. 42:2003;1173.
- (2003) Jpn. J. Appl. Phys. , vol.42 , pp. 1173
- Hashimoto, K.¹ Shirai, H.²

14
- 0000671779
- Kroll U., Meier J., Shah A., Mikhailov S., Weber J. J. Appl. Phys. 80:1996;4971.
- (1996) J. Appl. Phys. , vol.80 , pp. 4971
- Kroll, U.¹ Meier, J.² Shah, A.³ Mikhailov, S.⁴ Weber, J.⁵

15
- 0036577284
- Fujiwara H., Kondo M., Matsuda A. Jpn. J. Appl. Phys. 42:2002;2821.
- (2002) Jpn. J. Appl. Phys. , vol.42 , pp. 2821
- Fujiwara, H.¹ Kondo, M.² Matsuda, A.³

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