Improvement in ferroelectric properties of Pt/PZT/Pt capacitors etched as a function of Ar/O2 gas mixing ratio into Cl2/CF 4 plasma

Thin Solid Films

Volumn 459, Issue 1-2, 2004, Pages 71-75

  Lim, Kyu Tae ^a   Koo, Seong Mo ^a   Kim, Kyoung Tae ^a   Kim, Dong Pyo ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

Etching; Fatigue; Leakage current; PZT; Retention

Indexed keywords

ARGON; CAPACITORS; ETCHING; FERROELECTRICITY; LEAKAGE CURRENTS; PLASMAS; POLARIZATION; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

GAS MIXING RATIO; PLASMA-INDUCED DAMAGES; PZT;

PLATINUM COMPOUNDS;

EID: 2942585308     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.099     Document Type: Conference Paper

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