Effects of alloy disorder on the transport properties of AlxGa1-xN epilayers probed by persistent photoconductivity

Applied Physics Letters

Volumn 76, Issue 13, 2000, Pages 1728-1730

  Zeng, K C ^a   Lin, J Y ^a   Jiang, H X ^a  

^a KANSAS STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001162434     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126149     Document Type: Article

References (29)

1. H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).
2. N. Koide, H. Kato, M. Sassa, S. Yamasaki, K. Manabe, M. Hashimoto, H. Amano, K. Hiramatsu, and I. Akasaki, J. Cryst. Growth 115, 639 (1991).
3. D. V. Lang and R. A. Logan, Phys. Rev. Lett. 39, 635 (1977); D. V. Lang, R. A. Logan, and M. Joros, Phys. Rev. B 19, 1015 (1970).
4. D. V. Lang and R. A. Logan, Phys. Rev. Lett. 39, 635 (1977); D. V. Lang, R. A. Logan, and M. Joros, Phys. Rev. B 19, 1015 (1970).
5. R. J. Nelson, Appl. Phys. Lett. 31, 351 (1977).
6. H. J. Queisser and D. E. Theodorou, Phys. Rev. Lett. 43, 401 (1979); Phys. Rev. B 33, 4027 (1986).
7. H. J. Queisser and D. E. Theodorou, Phys. Rev. Lett. 43, 401 (1979); Phys. Rev. B 33, 4027 (1986).
8. P. M. Mooney, J. Appl. Phys. 67, R1 (1990).
9. J. Y. Lin, A. Dissanayake, G. Brown, and H. X. Jiang, Phys. Rev. B 42, 5855 (1990).
10. H. X. Jiang and J. Y. Lin, Phys. Rev. Lett. 64, 2547 (1990).
11. H. X. Jiang and J. Y. Lin, Phys. Rev. B 40, 10025 (1989).
12. C. Johnson, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, Appl. Phys. Lett. 68, 1808 (1996).
13. J. Z. Li, J. Y. Lin, H. X. Jiang, A. Salvador, A. Botchkarev, and H. Morkoç, Appl. Phys. Lett. 69, 1474 (1996).
14. G. Beadie, W. S. Rabinovich, A. E. Wickenden, D. D. Koleske, S. C. Binari, and J. A. Freitsa, Jr., Appl. Phys. Lett. 71, 1092 (1997).
15. C. H. Qiu and J. I. Pankove, Appl. Phys. Lett. 70, 1983 (1997).
16. M. T. Hirsch, A. Wolk, W. Walukiewicz, and E. E. Haller, Appl. Phys. Lett. 71, 1098 (1997).
17. H. M. Chen, Y. F. Chen, M. C. Lee, and M. S. Feng, J. Appl. Phys. 82, 899 (1997).
18. J. Z. Li, J. Y. Lin, H. X. Jiang, M. Asif Khan, and Q. Chen, J. Appl. Phys. 82, 1227 (1997); J. Vac, Sci. Technol. B 15, 1117 (1997).
19. J. Z. Li, J. Y. Lin, H. X. Jiang, M. Asif Khan, and Q. Chen, J. Appl. Phys. 82, 1227 (1997); J. Vac, Sci. Technol. B 15, 1117 (1997).
20. X. Z. Dang, C. D. Wang, E. T. Yu, K. S. Boutros, and J. M. Redwing, Appl. Phys. Lett. 72, 2745 (1998).
21. M. D. McCluskey, N. M. Johnson, C. G. Van de Walle, D. P. Bour, and M. Kneissl, Phys. Rev. Lett. 80, 4008 (1998).
22. C. H. Park and D. J. Chadi, Phys. Rev. B 55, 12995 (1997).
23. C. G. Van de Walle, Phys. Rev. B 57, R2033 (1998).
24. D. E. Lacklison et al., Semicond. Sci. Technol. 3, 633 (1988).
25. A. Dissanayake, M. Elahi, H. X. Jiang, and J. Y. Lin, Phys. Rev. B 45, 13996 (1992).
26. H. X. Jiang, A. Dissanayake, and J. Y. Lin, Phys. Rev. B 45, 4520 (1992).
27. M. Smith, J. Y. Lin, and H. X. Jiang, Phys. Rev. B 51, 4132 (1995); 54, 1471 (1996).
28. M. Smith, J. Y. Lin, and H. X. Jiang, Phys. Rev. B 51, 4132 (1995); 54, 1471 (1996).
29. N. F. Mott, Metal-Insulator Transitions (Taylor & Francis. New York, 1990), pp. 27-57.