Simulations of ultrathin, ultrashort double-gated MOSFETs with the density gradient transport model

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2002-January, Issue , 2002, Pages 271-274

  Lyumkis, E ^a   Mickevicius, R ^a   Penzin, O ^a   Polsky, B ^a   El Sayed, K ^a   Wettstein, A ^b   Fichtner, W ^c  

^a Integrated Systems Inc   (United States)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

^c ETH ZURICH   (Switzerland)

Author keywords

Boundary conditions; Differential equations; FETs; Modeling; MOSFETs; Mutual coupling; Nanostructures; Quantum mechanics; Robustness; Systems engineering and theory

Indexed keywords

BOUNDARY CONDITIONS; DIFFERENTIAL EQUATIONS; MODELS; MOSFET DEVICES; NANOSTRUCTURES; QUANTUM THEORY; ROBUSTNESS (CONTROL SYSTEMS);

DENSITY GRADIENT MODEL; FETS; HYDRODYNAMIC TRANSPORT; MOSFETS; MUTUAL COUPLING; NONEQUILIBRIUM CONDITIONS; QUANTUM MECHANICAL EFFECTS; SYSTEMS ENGINEERING AND THEORIES;

SEMICONDUCTOR DEVICES;

EID: 84943636673     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2002.1034570     Document Type: Conference Paper

References (7)

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