SCOPUS 정보 검색 플랫폼

Diamond and Related Materials

Volumn 10, Issue 9-10, 2001, Pages 1910-1915

Characteristics of Si-C-N films deposited by microwave plasma CVD on Si wafers with various buffer layer materials

(2) Chang, Hui Lin a Kuo, Cheng Tzu a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

Buffer layer; Cathodoluminescence; Field emission; Silicon carbon nitride

Indexed keywords

CARBON; CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; COLUMNS (STRUCTURAL); CRYSTAL STRUCTURE; MORPHOLOGY; NITROGEN; SILICON; SPECTROSCOPY; SYNTHESIS (CHEMICAL); TITANIUM;

BUFFER LAYER MATERIALS;

THIN FILMS;

SILICON CARBON NITRIDE;

EID: 0035448843 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-9635(01)00440-X Document Type: Article

Times cited : (37)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.