Progressive degradation in a-Si:H/SiN thin film transistors

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 60-66

  Merticaru, A R ^a   Mouthaan, A J ^a   Kuper, F G ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Charge trapping; Degradation; Interface states; Modelling

Indexed keywords

DEFECTS; DEGRADATION; ELECTRIC CHARGE; GATES (TRANSISTOR); RELAXATION PROCESSES; SILANES; SILICON NITRIDE; STRESS ANALYSIS;

PROGRESSIVE DEGRADATION;

THIN FILM TRANSISTORS;

EID: 0037416701     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01245-2     Document Type: Conference Paper

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