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Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 460-464
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Non-radiative and radiative properties of PLD-deposited polycrystalline GaN studied by UV ps-to-ns laser pulses
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CARRIER CONCENTRATION;
ELECTRON TRAPS;
EPITAXIAL GROWTH;
LASER PULSES;
LIGHT EMITTING DIODES;
PHOTOLUMINESCENCE;
PHOTOMULTIPLIERS;
POLYCRYSTALLINE MATERIALS;
PROBABILITY;
PULSED LASER DEPOSITION;
SAPPHIRE;
SCANNING ELECTRON MICROSCOPY;
THIN FILMS;
TRANSPORT PROPERTIES;
X RAY PHOTOELECTRON SPECTROSCOPY;
STREADY-STATE PHOTOLUMINESCENCE;
THERMAL MISMATCH;
TIME-RESOLVED PHOTOLUMINESCENCE (TRPL);
TRANSIENT PHOTOCURRENTS;
GALLIUM NITRIDE;
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EID: 2942532541
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2004.03.019 Document Type: Conference Paper |
Times cited : (7)
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References (10)
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