Optical properties and transport in PLD-GaN

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 569-573

  Niehus, M ^a   Sanguino, P ^a   Monteiro, T ^b   Soares, M J ^b   Pereira, E ^b   Vieira, M ^c   Koynov, S ^d   Schwarz, R ^a,c  

^a INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c INSTITUTO SUPERIOR DE ENGENHARIA DE LISBOA   (Portugal)

^d BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ENERGY GAP; EXCITONS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; STACKING FAULTS;

EMISSION BANDS;

PULSED LASER DEPOSITION;

EID: 0037345287     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00415-X     Document Type: Conference Paper

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