Post hydrogenation effect by hot wire method on poly-crystalline silicon based devices

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 403-407

  Shimizu, Kousaku ^a   Kohama, Noriyoshi ^a   Tani, Tadaaki ^a   Hanna, Jun Ichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); CRYSTALLINE MATERIALS; ELECTRICAL ENGINEERING; EXCIMER LASERS; FABRICATION; LIQUID CRYSTAL DISPLAYS; PASSIVATION; POLYSILICON; SECONDARY ION MASS SPECTROMETRY; THERMOANALYSIS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

HOT WIRE METHODS; POLY-SI THIN FILM TRANSISTOR (POLY-SI TFT); PROCESS GASES; THERMAL DESORPTION MASS SPECTROSCOPY (TDS);

HYDROGENATION;

EID: 2942530680     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.007     Document Type: Conference Paper

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