Poly-SiGe TFTs fabricated by low temperature chemical vapor deposition at 450°C

Materials Research Society Symposium - Proceedings

Volumn 686, Issue , 2002, Pages 107-112

  Shimizu, Kousaku ^a   Zhang, Jianjun ^a   Lee, Jeong Woo ^a   Hanna, Jun Ichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; GRAIN SIZE AND SHAPE; HYDROGENATION; POLYCRYSTALLINE MATERIALS; REDOX REACTIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; THRESHOLD VOLTAGE;

REACTIVE THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD);

THIN FILM TRANSISTORS;

EID: 0036343757     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)