Antimonide semiconductor saturable absorber for 1.5 μm

Electronics Letters

Volumn 40, Issue 22, 2004, Pages 1414-1416

  Grange, R ^a   Ostinelli, O ^b   Haiml, M ^a   Krainer, L ^a   Spuhler G J ^a   Ebnother M ^a   Gini, E ^a   Schon S ^a   Keller, U ^a  

^a ETH ZURICH   (Switzerland)

^b Bookham Inc   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; LASERS; MIRRORS; MOLECULAR BEAM EPITAXY; NONLINEAR OPTICS; PARAMETER ESTIMATION; SUBSTRATES; SWITCHING; VAPOR PHASE EPITAXY;

DISTRIBUTED BRAGG REFLECTORS (DBR); LASER SOURCES; NONLINEAR REFLECTIVITY; SEMICONDUCTOR SATURABLE ABSORBER;

SEMICONDUCTOR MATERIALS;

EID: 9144244432     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20046058     Document Type: Article

References (13)

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