Compositional relation of GaAsxSb1-x and related compounds in metalorganic chemical vapor deposition using tBAs and TMSb as group V precursors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 1 A, 1996, Pages 16-21

  Watanabe, Naozo ^a   Iwamura, Yasuo ^a  

^a KANAGAWA UNIVERSITY   (Japan)

Author keywords

GaAs; GaSb; Mixed crystal; MOCVD; Semiconductor; Thermodynamics

Indexed keywords

CALCULATIONS; COMPOSITION; LOW TEMPERATURE OPERATIONS; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; THERMODYNAMICS;

HIGH REACTION EQUILIBRIUM COEFFICIENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION GROWTH; METHYL GROUP; MIXED CRYSTAL; PRECURSORS; THERMAL EQUILIBRIUM RELATION; THERMODYNAMIC MODEL;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029756422     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.35.16     Document Type: Article

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