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Journal of Crystal Growth

Volumn 286, Issue 2, 2006, Pages 218-222

Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer

(6) Mori, M a Fujimoto, N a Akae, N a Uotani, K a Tambo, T a Tatsuyama, C a

a UNIVERSITY OF TOYAMA (Japan)

Author keywords

A1. Atomic force microscopy; A1. X ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting materials

Indexed keywords

ANTIMONY COMPOUNDS; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; EVAPORATION; FILM GROWTH; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; ULTRAHIGH VACUUM; X RAY DIFFRACTION ANALYSIS;

CRYSTAL QUALITY; GROWTH TEMPERATURE; INSB FILMS; ULTRA HIGH VACUUM CHAMBER (UHV);

THIN FILMS;

EID: 29344450150 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.10.011 Document Type: Article

Times cited : (8)

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