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Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 512-517

Growth of InSb films on a Si(001) substrate with Ge buffer layer

(5) Mori, M a Tsubosaki, Y a Tambo, T a Ueba, H a Tatsuyama, C a

a UNIVERSITY OF TOYAMA (Japan)

Author keywords

AFM; Ge buffer layer; Heteroepitaxy; InSb; Si(001)

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; X RAY CRYSTALLOGRAPHY;

GERMANIUM BUFFER LAYERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031548618 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)80134-1 Document Type: Article

Times cited : (14)

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