Effect of current flow direction on the heteroepitaxial growth of InSb films on Ge/Si(001) substrate heated by direct current

Applied Surface Science

Volumn 159, Issue , 2000, Pages 328-334

  Mori, M ^a   Nizawa, Y ^a   Nishi, Y ^a   Mae, K ^a   Tambo, T ^a   Tatsuyama, C ^a  

^a UNIVERSITY OF TOYAMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; ELECTRODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL GRADIENTS;

DIRECT CURRENTS; HETEROEPITAXIAL GROWTH; LATTICE MISMATCH;

SEMICONDUCTING FILMS;

EID: 0034207419     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00075-1     Document Type: Article

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