Heteroepitaxial growth of InSb on Si(001) surface via Ge buffer layers

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 563-569

  Mori, M ^a   Li, D M ^a   Yamazaki, M ^a   Tambo, T ^a   Ueba, H ^a   Tatsuyama, C ^a  

^a UNIVERSITY OF TOYAMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE STRUCTURE; THERMAL EFFECTS;

HETEROEPITAXIAL GROWTH;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030233542     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00203-6     Document Type: Article

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