Electromigration lifetime improvement of copper interconnect by cap/dielectric interface treatment and geometrical design

IEEE Transactions on Electron Devices

Volumn 52, Issue 12, 2005, Pages 2602-2608

  Lin, Ming Hsien ^a,b   Lin, Y L ^a   Chen, J M ^a   Yeh, M S ^a   Chang, K P ^a   Su, K C ^a   Wang, Tahui ^b  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Copper electromigration (EM); Cu silicide; Cu cap interface; Preclean treatment

Indexed keywords

ACTIVATION ENERGY; ADHESION; COPPER; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY;

CAP-LAYER DEPOSITIONS; COPPER ELECTROMIGRATION; PRECLEAN TREATMENT; STRESS CURRENT;

ELECTROMIGRATION;

EID: 29244451580     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.859597     Document Type: Article

References (10)

1. J. Lloyd, M. W. Lane, and E. G. Liniger, "Adhesion and electromigration in Cu interconnect," in Proc. Int. Integrated Reliability Workshop, Lake Tahoe, CA, 2002, pp. 32-35.
2. M. Hatano, T. Usui, Y. Shimooka, and H. Kaneko, "EM Lifetime improvement of Cu damascene interconnect by P-SiC cap layer," in Proc. Int. Interconnect Technology Conf., San Francisco, CA, 2002, pp. 212-214.
3. C.-K. Hu, L. Gignac, R. Rosenberg, E. Liniger, J. Rubino, C. Sambucetti, A. Domenicucci, X. Chen, and A. K. Stamper, "Reduced electromigration of Cu wires by surface coating," Appl. Phys. Lett., vol. 81, pp. 1782-1784, 2002.
4. A. H. Fisher, A. von Glasow, S. Penka, and F. Ungar, "Electromigration failure mechanism studies on copper interconnects," in Proc. Int. Interconnect Technology Conf., San Francisco, CA, 2002, pp. 139-141.
5. A. von Glasow, A. H. Fischer, D. Bunel, G. Friese, A. Hausmann, O. Heitzsch, M. Hommel, J. Kriz, S. Penka, P. Raffin, C. Robin, H.-P. Sperlich, F. Unger, and A. E. Zitzelsberger, "The influence of the SiN cap process on the electromigration and stressvoiding performance of dual damascene Cu interconnects," in Proc. Int. Reliability Physics Symp., Dallas, TX, 2003, pp. 146-150.
6. E. O. Shaffer, "Measuring/predicting the adhesion of polymeric coatings," Ph.D. dissertation, Massachusetts Inst. Technol., Cambridge, MA, 1995.
7. Q. Ma, "A four-point bending technique for studying subcritical crack growth in thin film and interfaces," J. Mater Res., vol. 12, pp. 840-845, 1997.
8. M. H. Lin, G. S. Yang, Y. L. Lin, M. T. Lin, C. C. Lin, M. S. Yeh, K. P. Chang, K. C. Su, J. K. Chen, Y. J. Chang, and T. Wang, "A practical methodology for multimodality Cu electromigration lifetime prediction," in Proc. Int. Integrated Reliability Workshop, Lake Tahoe, CA, 2002, pp. 50-54.
9. J. Noguchi, N. Ohashi, T. Jimbo, H. Yamaguchi, K. Takeda, and K. Hinode, "Effect of NH3-plasma treatment and CMP modification on TDDB improvement Cu metallization," IEEE Trans. Electron. Devices, vol. ED-48, pp. 1340-1345, Jul. 2001.
10. B.-Z. Li, T. D. Sullivan, and T. C. Lee, "Line depletion electromigration characteristic of Cu interconnects," in Proc. Int. Reliability Physics Symp., Dallas, TX, 2003, pp. 140-145.